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炭化タンタルとは(TAC)?

Tantalum Carbide (TaC) is a binary compound of tantalum (Ta) and carbon (C), with the chemical formula usually expressed as TaCₓ (where x ranges from 0.4 to 1). It is classified as a refractory ceramic material with excellent hardness, high-temperature stability and metallic conductivity.


1. Structure of tantalum carbide

the Structure of tantalum carbide


1.1 Chemical composition and crystal structure


Tantalum carbide is a binary ceramic compound composed of tantalum (Ta) and carbon (C).

Its crystal structure is face-centered cubic (FCC), which gives it excellent hardness and stability.


1.2 Bonding properties


Strong covalent bonding makes Tantalum carbide extremely hard and resistant to deformation.

TaC has an extremely low diffusion coefficient and remains stable even at high temperatures.


Tantalum carbide (TaC) coating on a microscopic cross-section

Tantalum carbide (TaC) coating on a microscopic cross-section


2. Physical properties of Tantalum carbide


Physical Properties
Values
Density
~14.3 g/cm³
Melting Point
~3,880°C (very high)
Hardness
~9-10 Mohs (~2,000 Vickers)
Electrical Conductivity
High (metal-like)
Thermal Conductivity
~21 W/m·K
Chemical Stability
Highly resistant to oxidation and corrosion



2.1 Ultra-high melting point


With a melting point of 3,880°C, Tantalum Carbide has one of the highest melting points of any known material, resulting in excellent stability at extreme temperatures.


2.2 Excellent hardness


With a Mohs hardness of approximately 9-10, it is close to diamond and is therefore widely used in wear-resistant coatings.


2.3 Good electrical conductivity


Unlike most ceramic materials, TaC has a high metal-like electrical conductivity, which makes it valuable for applications in certain electronic devices.


2.4 Corrosion and oxidation resistance


TaC is extremely resistant to acid corrosion and maintains its structural integrity in harsh environments over long periods of time.

However, TaC may oxidize to tantalum pentoxide (Ta₂O₅) in air above 1,500°C. 


3. Common finished tantalum carbide products


3.1 Tantalum Carbide coated parts


CVD Tantalum Carbide Coated Susceptor: Used in semiconductor epitaxy and high temperature processing.

Tantalum Carbide Coated Graphite Parts: Used in high temperature furnaces and wafer processing chambers. Examples include Tantalum Carbide Coated Porous Graphite, which significantly improves process efficiency and crystal quality by optimizing gas flow during SiC crystal growth, reducing thermal stress, improving thermal uniformity, enhancing corrosion resistance, and inhibiting impurity diffusion.

Tantalum Carbide Coated Rotation Plate: Veteksemicon's TaC coated rotation plate has a high purity composition with less than 5ppm impurity content and a dense and uniform structure, which is widely used in LPE EPI system, Aixtron system, Nuflare system, TEL CVD system, VEECO system, TSI system. systems, TSI systems.

TaC Coated Heater: The combination of TaC Coating's extremely high melting point (~3880°C) allows it to operate at very high temperatures, especially in the growth of Gallium Nitride (GaN) epitaxial layers in the Metal Organic Chemical Vapor Deposition (MOCVD) process.

Tantalum Carbide Coated Crucible: CVD TaC coated crucibles often play a key role in the growth of SiC single crystals by PVT.


3.2 Cutting Tools and Wear-Resistant Components


● Tantalum Carbide Coated Carbide Cutting Tools: Improve tool life and machining accuracy.

● Aerospace nozzles and heat shields: provide protection in extreme heat and corrosive environments.


3.3 Tantalum carbide high performance ceramic products


● Spacecraft Thermal Protection Systems (TPS): for spacecraft and hypersonic vehicles.

● Nuclear fuel coatings: protect nuclear fuel pellets from corrosion.


4. Tantalum carbide applications in semiconductor manufacturing


4.1 Tantalum carbide coated carriers (Susceptor) for epitaxial processes


Role: Tantalum carbide coatings applied to graphite carriers improve thermal uniformity and chemical stability in chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) processes.

Advantage: Reduced process contamination and extended carrier life.


4.2 Etch and Deposition Components


Wafer transfer rings and shields: Tantalum carbide coating improves the durability of plasma etch chambers.

Advantage: withstands aggressive etching environments and reduces contaminant precipitation.


4.3 High Temperature Heating Elements


Application in SiC CVD growth: Tantalum carbide coated heating elements improve the stability and efficiency of the silicon carbide (SiC) wafer fabrication process.


4.4 Protective Coatings for Semiconductor Manufacturing Equipment


Why do you need TaC coating?  Semiconductor manufacturing involves extreme temperatures and corrosive gases, and Tantalum Carbide coatings are effective in improving the stability and lifetime of equipment.


5. Why choose Veteksemicon?


Veteksemicon is a leading manufacturer and supplier of Tantalum Carbide coating materials to the semiconductor industry in China. Our main products include CVD tantalum carbide coated parts, sintered TaC coated parts for SiC crystal growth or semiconductor epitaxy processes. Veteksemicon is committed to be an innovator and leader in the Tantalum Carbide coating industry through continuous R&D and technology iteration.


Veteksemicon Tantalum Carbide Coating products


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