You can rest assured to buy customized Silicon Carbide Cantilever Paddle from VeTek Semiconducto. We look forward to cooperating with you, if you want to know more, you can consult us now, we will reply to you in time!
VeTek Semiconductor's Silicon Carbide Cantilever Paddle is made of high-purity silicon carbide and has excellent high temperature resistance and mechanical strength. It is an indispensable key component in the semiconductor manufacturing process, especially in diffusion or LPCVD furnaces and RTP processes. The precise design and manufacturing of the Silicon Carbide Cantilever Paddle ensures the safe positioning and transfer of wafers to meet high-precision process requirements.
VeTek Semiconductor's Silicon Carbide Cantilever Paddle is made of silicon carbide as the main material. Silicon carbide has the characteristics of high strength and good thermal stability, so it can withstand harsh conditions in the high-temperature process environment of semiconductor furnaces. One of the reasons for choosing silicon carbide is because it can adapt to the high-temperature environment in semiconductor furnaces.
The design of the Silicon Carbide Cantilever Paddle allows it to extend into the process tube in the furnace and be firmly fixed at one end outside the tube. This design ensures that the wafer being processed remains stable and supported during the process and minimizes interference with the thermal environment in the furnace.
VeTek Semiconductor is committed to providing high-quality SiC cantilever paddle products. Our products are carefully designed and manufactured to meet the stringent requirements of the semiconductor manufacturing process. The excellent performance and reliability of the Silicon Carbide Cantilever Paddle make it an indispensable key component in the semiconductor industry. VeTek Semiconductor is committed to providing quality products at competitive prices, and we look forward to becoming your long-term partner in China.
Product parameter of the Silicon Carbide Cantilever Paddle
Physical properties of Recrystallized Silicon Carbide
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